In this study, we use ITO glass to deposit thermoelectric thin films by using electrochemically\ndeposition method. With electrochemical deposition, we deposit Te-Bi-Sb thin films on ITO glasses,\ntrying to probe into different influences on thermoelectric characteristics by changing Sb3+ consistency\nand current density. The finished Te-Bi-Sb thin films will be observed by Scanning Electron\nMicroscope (SEM) to realize the microstructure, also, be identified the crystal structure with XRD, and\nelectrical analysis. The result finds out the thin film is a P-type thermoelectric material. Owing to the\nvariation of current density or electrolyte density affects and changes the structure of Te-Bi-Sb film,\nthe study categorizes three types of forming structures: Ball-type, Mixed-type, and Acicular-type; the\nion content of the precipitated film can be controlled by alter current or electrolyte density. Good\nthermoelectric material requires high Seebeck coefficient, and the best one in the study is in the\ncondition of 38mM-2.1mA/cm2, which results in 32.89Ã?¼V/K. Also, power factor is a criterion to\nevaluate a material, and bigger factor equals to better quality. In this study, we get the best power\nfactor in the condition of 15mM-2.1 mA/cm2, with the result of 49.5505Ã?±2/ÃÂ.
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